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Part Datasheet Search > TVS Diodes > GeneSiC Semiconductor > 1N3879R Datasheet PDF
1N3879R
$ 5.122
1N3879R Datasheet PDF (3 Pages)
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1N3879R Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
2 Pin
Case/Package
DO-203AA
Forward Voltage
1.4V @6A
Reverse recovery time
200 ns
Maximum Forward Voltage (Max)
1.4V @6A
Forward Current (Max)
6 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃

1N3879R Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Height
22.79 mm
Operating Temperature
100 ℃

1N3879R Documents

GeneSiC Semiconductor
3 Pages / 0.71 MByte
GeneSiC Semiconductor
3 Pages / 0.41 MByte
GeneSiC Semiconductor
1 Pages / 0.04 MByte

1N3879 Documents

GeneSiC Semiconductor
Diode Switching 50V 6A 2Pin DO-4
Motorola
6A, 50V, SILICON, RECTIFIER DIODE, DO-4
Microsemi
Fast Rectifier (100-500ns)
Vishay Semiconductor
Fast Recovery Diodes (Stud Version), 6/12/16A
Solid State Devices
50V, 6A fast recovery rectifier
Vishay Intertechnology
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
ST Microelectronics
6A, 50V, SILICON, RECTIFIER DIODE
Solitron Devices
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-4, 1 PIN
VISHAY
Diode Switching 50V 6A 2Pin DO-4
Microchip
FAST RECOVERY RECTIFIER
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