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Part Datasheet Search > BJTs > Microsemi > 2N2102S Datasheet PDF
2N2102S
$ 21.047
2N2102S Datasheet PDF (2 Pages)
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2N2102S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-5
Polarity
NPN
Breakdown Voltage (Collector to Emitter)
65 V
Continuous Collector Current
1A
Power Dissipation (Max)
5000 mW

2N2102S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

2N2102S Documents

Microsemi
2 Pages / 0.13 MByte
Microsemi
134 Pages / 0.15 MByte

2N2102 Documents

ST Microelectronics
Trans GP BJT NPN 65V 1A 3Pin TO-39 Bag
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MULTICOMP 2N2102 Bipolar (BJT) Single Transistor, NPN, 65V, 60MHz, 800mW, 1A, 40 hFE
Microsemi
Trans GP BJT NPN 65V 1A 3Pin TO-5
Central Semiconductor
Trans GP BJT NPN 65V 1A 3Pin TO-39 Box
CDIL
Transistor: NPN; bipolar; 65V; 1A; 1/5W; TO39; 6dB
Continental Device
1W RF NPN Metal Can Transistor. 65V Vceo, 1A Ic, 40 - 120 hFE.p
Boca Semiconductor
AMPLIFIER TRANSISTOR NPN SILICON
New Jersey Semiconductor
Trans GP BJT NPN 65V 1A 3Pin TO-39 Boxo
Microsemi
Trans GP BJT NPN 65V 1A 3Pin TO-5
Microsemi
TO-5 NPN 65V 1A
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