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Part Datasheet Search > BJTs > ON Semiconductor > 2N5190G Datasheet PDF
2N5190G
$ 0.313
2N5190G Datasheet PDF (6 Pages)
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2N5190G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
2 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
40.0 V
Current Rating
4.00 A
Case/Package
TO-126-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
40 W
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
4A
hFE Min
25 @1.5A, 2V
hFE Max
100
Input Power (Max)
40 W
DC Current Gain (hFE)
2
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
40000 mW

2N5190G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Box
Material
Silicon
Operating Temperature
-65℃ ~ 150℃ (TJ)

2N5190G Documents

ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.03 MByte

2N5190 Documents

ON Semiconductor
TO-225-3 NPN 40V 4A
Central Semiconductor
Trans GP BJT NPN 40V 4A 3Pin(3+Tab) TO-126
NJS
Trans GP BJT NPN 40V 4A 3Pin TO-126
ON Semiconductor
TO-225AA NPN 40V 4A
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