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2N5302G
$ 0.604
2N5302G Datasheet PDF (5 Pages)
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2N5302G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
2 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
60.0 V
Current Rating
30.0 A
Case/Package
TO-204-2
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
200 W
Gain Bandwidth Product
2 MHz
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
30A
hFE Min
15 @15A, 2V
hFE Max
60
Input Power (Max)
200 W
DC Current Gain (hFE)
2
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

2N5302G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N5302G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.16 MByte

2N5302 Documents

ON Semiconductor
TO-204-2 NPN 60V 30A
Microsemi
Bipolar Transistors - BJT Power BJT
Microchip
NPN TRANSISTOR
Central Semiconductor
Trans GP BJT NPN 60V 30A 3Pin(2+Tab) TO-3 Sleeve
TI
60V, 30A, 200W, NPN silicon power transistorO
Harris
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Solitron Devices
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Fairchild
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Toshiba
TRANSISTOR 30 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN, BIP General Purpose Power
API Technologies
Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
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