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Part Datasheet Search > BJTs > Microsemi > 2N5415S Datasheet PDF
2N5415S
$ 30.98
2N5415S Datasheet PDF (7 Pages)
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2N5415S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-39-3
Power Dissipation
750 mW
hFE Min
30 @50mA, 10V
hFE Max
120 @50mA, 10V
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
750 mW

2N5415S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon

2N5415S Documents

Microsemi
7 Pages / 0.3 MByte
Microsemi
6 Pages / 0.31 MByte

2N5415 Documents

ST Microelectronics
Trans GP BJT PNP 200V 1A 3Pin TO-39 Bag
Multicomp
MULTICOMP 2N5415 Bipolar (BJT) Single Transistor, PNP, -200V, 15MHz, 10W, 1A, 30 hFE
Microsemi
Trans GP BJT PNP 200V 1A 3Pin TO-5
CDIL
Transistor: PNP; bipolar; 200V; 1A; 0.1W(1/10W); TO39
Central Semiconductor
2N5415 200V 1A Through Hole Silicon PNP Transistor - TO-39
Microchip
PNP TRANSISTORS
ON Semiconductor
PNP 10W 200V 1A TRANSISTOR
Fairchild
PNP 10W 200V 1A TRANSISTOR
ETC
POWER TRANSISTORS
Microsemi
Trans GP BJT PNP 200V 1A 3Pin TO-39
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