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2N5551BU
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2N5551BU Datasheet PDF (6 Pages)
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2N5551BU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Number of Positions
3 Position
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
160 V
hFE Min
80 @10mA, 5V
Input Power (Max)
625 mW
DC Current Gain (hFE)
30
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
625 mW

2N5551BU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bag
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5551BU Documents

ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
11 Pages / 0.39 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte

2N5551 Documents

ON Semiconductor
Trans GP BJT NPN 160V 0.6A 3Pin TO-92 Bulk
CJ
TO-92 NPN 160V 600mA
Fairchild
Trans GP BJT NPN 160V 0.6A 3Pin TO-92
Diotec Semiconductor
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
Multicomp
MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160V, 300MHz, 625mW, 600mA, 80 hFE
先科ST
NPN Vceo=160V Ic=600mA hfe=30 fT=300MHz P=625mW
ST Microelectronics
NPN,Vceo=160V,Ic=600mA,hfe=30~250
Taitron
160V NPN General Purpose Transistor in TO-92, RoHS
Central Semiconductor
Trans Npn 160V 0.6A To-92
UTC
NPN SILICON TRANSISTOR
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