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2N5657G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-225-3

Description:

TO-225 NPN 350V 0.5A

Pictures:

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Symbol

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Product Pictures

Documentation:

2N5657G Datasheet (2 Pages)

2N5657G Datasheet PDF (2 Pages)

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2N5657G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

10 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

250 V

Current Rating

3.70 A

Case/Package

TO-225-3

Halogen Free Status

Halogen Free

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

20 W

Breakdown Voltage (Collector to Emitter)

350 V

Continuous Collector Current

0.5A

hFE Min

30 @100mA, 10V

hFE Max

250

Input Power (Max)

20 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

20000 mW

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2N5657G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Size-Width

2.66 mm

Operating Temperature

-65℃ ~ 150℃ (TJ)

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2N5657G Environmental

2N5657G Export Classifications

2N5657G Function Overview

2N5657G Documents

2N5657G Datasheet

ON Semiconductor

2 Pages / 0.19 MByte

2N5657G Other Datasheet PDF

ON Semiconductor

8 Pages / 0.23 MByte

2N5657G Drawing Diagrams

ON Semiconductor

2 Pages / 0.03 MByte

2N5657G Notice File

ON Semiconductor

11 Pages / 1.83 MByte

2N5657G Other References

ON Semiconductor

1 Pages / 0.13 MByte

2N5657 Documents

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