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2N6109G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-220-3

Description:

TO-220AB PNP 50V 7A

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

2N6109G Datasheet (5 Pages)

Package Outline Dimension on4 Page

Part Numbering System on1 Page

2N6109G Application Note (5 Pages)

2N6109G Datasheet PDF (5 Pages)

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2N6109G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

10 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

-50.0 V

Current Rating

7.00 A

Case/Package

TO-220-3

Number of Positions

3 Position

Polarity

PNP, P-Channel

Power Dissipation

40 W

Breakdown Voltage (Collector to Emitter)

50 V

Thermal Resistance

3.125℃/W (RθJC)

Continuous Collector Current

hFE Min

30 @2.5A, 4V

hFE Max

150

Input Power (Max)

40 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

40 W

View Datasheet >

2N6109G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Size-Length

10.28 mm

Size-Width

4.83 mm

Size-Height

15.75 mm

Operating Temperature

-65℃ ~ 150℃ (TJ)

View Datasheet >

2N6109G Environmental

2N6109G Export Classifications

2N6109G Function Overview

2N6109G Documents

2N6109G Datasheet

ON Semiconductor

5 Pages / 0.2 MByte

2N6109G Other Datasheet PDF

ON Semiconductor

134 Pages / 0.15 MByte

2N6109G Drawing Diagrams

ON Semiconductor

2 Pages / 0.02 MByte

2N6109G Application Note

ON Semiconductor

5 Pages / 0.1 MByte

2N6109G Notice File

ON Semiconductor

5 Pages / 0.15 MByte

2N6109G Other References

ON Semiconductor

1 Pages / 0.13 MByte

2N6109 Documents

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ON Semiconductor

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