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2N6338G
$ 6.693
2N6338G Datasheet PDF (5 Pages)
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2N6338G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
40 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
100 V
Current Rating
25.0 A
Case/Package
TO-204-2
Polarity
NPN
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
25A
hFE Min
30 @10A, 2V
hFE Max
120
Input Power (Max)
200 W
DC Current Gain (hFE)
40
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

2N6338G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N6338G Documents

ON Semiconductor
5 Pages / 0.14 MByte
ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
1 Pages / 0.03 MByte

2N6338 Documents

ON Semiconductor
TO-204-2 NPN 100V 25A
Microsemi
Bipolar Transistors - BJT NPN Transistor
Motorola
TRANS NPN 100V 25A TO-3
Microchip
Trans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3
NTE Electronics
t-Npn Si-Pwr Amp & Sw
Solitron Devices
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
Mospec
POWER TRANSISTOR(25A,200W)
Solid State Devices
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Vishay Semiconductor
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
API Technologies
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
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