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Part Datasheet Search > BJTs > Toshiba > 2SA1244-Y(Q) Datasheet PDF
2SA1244-Y(Q)
$ 2.48

2SA1244-Y(Q) Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-252-3
Polarity
PNP
Power Dissipation
1000 mW
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
5A
hFE Min
120 @1A, 1V
Input Power (Max)
1 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1 W

2SA1244-Y(Q) Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
6.8 mm
Size-Width
5.5 mm
Size-Height
2.5 mm
Operating Temperature
150℃ (TJ)

2SA1244-Y(Q) Documents

Toshiba
6 Pages / 0.15 MByte
Toshiba
5 Pages / 0.16 MByte

2SA1244 Documents

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Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
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