2SC4002E Datasheet PDF - ON Semiconductor

●Compared to other transistors, the NPN 2SC4002E general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.