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Part Datasheet Search > BJTs > ON Semiconductor > 2SD1012G-SPA Datasheet PDF
2SD1012G-SPA
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2SD1012G-SPA Datasheet PDF (10 Pages)
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2SD1012G-SPA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
SIP-3
Polarity
NPN
Power Dissipation
250 mW
Breakdown Voltage (Collector to Emitter)
15 V
Continuous Collector Current
0.7A
hFE Min
280 @50mA, 2V
Input Power (Max)
250 mW
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250 mW

2SD1012G-SPA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Size-Height
3 mm
Operating Temperature
125℃ (TJ)

2SD1012G-SPA Documents

ON Semiconductor
10 Pages / 0.7 MByte
ON Semiconductor
10 Pages / 0.52 MByte

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