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Part Datasheet Search > BJTs > ON Semiconductor > 2SD1685G Datasheet PDF
2SD1685G
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2SD1685G Datasheet PDF (6 Pages)
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2SD1685G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
120 MHz
Number of Pins
3 Pin
Case/Package
TO-126-3
Polarity
N-Channel, NPN
Power Dissipation
1.5 W
Breakdown Voltage (Collector to Emitter)
20 V
hFE Min
280 @500mA, 2V
hFE Max
560
Input Power (Max)
1.5 W
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
1500 mW

2SD1685G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Operating Temperature
150℃ (TJ)

2SD1685G Documents

ON Semiconductor
6 Pages / 0.26 MByte
ON Semiconductor
11 Pages / 0.24 MByte

2SD1685 Documents

Sanyo Semiconductor
NPN Epitaxial Planar Silicon Transistor 20V/5A Switching Applications
ON Semiconductor
Trans GP BJT NPN 20V 5A 1500mW 3Pin TO-126ML Bag
Sanyo Semiconductor
TRANS NPN 20V 5A TO-126ML
ON Semiconductor
TO-126ML NPN 20V 5A
Sanyo Semiconductor
Power Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
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