A2T20H160W04N Datasheet PDF - NXP

●Overview

●The A2T20H160W04NR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 MHz.

●MoreLess

●## Features

● Advanced high performance in-package Doherty

● Designed for wide instantaneous bandwidth applications

● Greater negative gate-source voltage range for improved Class C operation

● Able to withstand extremely high output VSWR and broadband operating conditions

● Designed for digital predistortion error correction systems

● RoHS compliant

●## Features RF Performance Table

●### 1880-2025 MHz

●Typical Doherty single-carrier W-CDMA performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.2 Vdc, Pout = 28 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

●Frequency

● |

●Gps

●(dB)

● |

●ηD

●(%)

● |

●Output PAR

●(dB)

● |

●ACPR

●(dBc)

●\---|---|---|---|---

●1880 MHz| 16.8| 45.8| 8.3| –32.5

●1960 MHz| 17.0| 47.7| 8.2| –33.5

●2025 MHz| 16.5| 47.9| 8.0| –34.3