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AFGB40T65SQDN Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-263-3

Description:

Trans IGBT Chip N-CH 650V 80A 238000mW Automotive 3-Pin(2+Tab) D2PAK T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

AFGB40T65SQDN Application Note (9 Pages)

AFGB40T65SQDN Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Number of Positions

3 Position

Power Dissipation

238 W

Breakdown Voltage (Collector to Emitter)

650 V

Reverse recovery time

131 ns

Input Power (Max)

238 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

238000 mW

AFGB40T65SQDN Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 175℃ (TJ)

AFGB40T65SQDN Environmental

AFGB40T65SQDN Function Overview

AFGB40T65SQDN Documents

AFGB40T65SQDN Application Note

ON Semiconductor

9 Pages / 0.25 MByte

AFGB40T65 Documents

AFGB40T65SQDN Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 650V 80A 238000mW Automotive 3-Pin(2+Tab) D2PAK T/R

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