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AOT10B65M1 Datasheet PDF - Alpha & Omega Semiconductor

Manufacturer:

Alpha & Omega Semiconductor

Category:

IGBTs

Case Package:

TO-220-3

Description:

Trans IGBT Chip N-CH 650V 20A 150000mW 3Pin(3+Tab) TO-220 Tube

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AOT10B65M1 Datasheet PDF (9 Pages)

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AOT10B65M1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Rating

150 W

Power Dissipation

150000 mW

Breakdown Voltage (Collector to Emitter)

650 V

Reverse recovery time

262 ns

Input Power (Max)

150 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

150000 mW

AOT10B65M1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

AOT10B65M1 Environmental

AOT10B65M1 Function Overview

AOT10B65M1 Documents

AOT10B65M1 Other Datasheet PDF

Alpha & Omega Semiconductor

9 Pages / 0.53 MByte

AOT10B65M1 Drawing Diagrams

Alpha & Omega Semiconductor

1 Pages / 0.09 MByte

AOT10B65 Documents

AOT10B65M2 Datasheet PDF

Alpha & Omega Semiconductor

Trans IGBT Chip N-CH 650V 20A 150000mW 3Pin(3+Tab) TO-220 Tube

AOT10B65M1 Datasheet PDF

Alpha & Omega Semiconductor

Trans IGBT Chip N-CH 650V 20A 150000mW 3Pin(3+Tab) TO-220 Tube

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