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APT30GP60B2DLG Datasheet PDF - Microsemi

Manufacturer:

Microsemi

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 600V 100A 3Pin(3+Tab) T-MAX

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Documentation:

APT30GP60B2DLG Datasheet (1 Pages)APT30GP60B2DLG User Reference Manual Guide (12 Pages)

APT30GP60B2DLG Datasheet PDF (1 Pages)

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APT30GP60B2DLG Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Breakdown Voltage (Collector to Emitter)

600 V

Input Power (Max)

463 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

463000 mW

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APT30GP60B2DLG Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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APT30GP60B2DLG Environmental

APT30GP60B2DLG Function Overview

APT30GP60B2DLG Documents

APT30GP60B2DLG Datasheet

Microsemi

1 Pages / 0.01 MByte

APT30GP60B2DLG User Reference Manual Guide

Microsemi

12 Pages / 1.03 MByte

APT30GP60B2DLG Other Datasheet PDF

Microsemi

9 Pages / 0.22 MByte

APT30GP60B2 Documents

APT30GP60B2DLG Datasheet PDF

Microsemi

Trans IGBT Chip N-CH 600V 100A 3Pin(3+Tab) T-MAX

APT30GP60B2DL Datasheet PDF

Microsemi

Resonant Mode Combi Igbt Insulated Gate Bipolar Transistors, Igbts

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