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Part Datasheet Search > BJTs > ST Microelectronics > BC107B Datasheet PDF
BC107B
$ 0.715
BC107B Datasheet PDF (9 Pages)
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BC107B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-18
Power Rating
300 mW
Polarity
NPN
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
200 @2mA, 5V
hFE Max
450
Input Power (Max)
300 mW
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BC107B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Operating Temperature
175℃ (TJ)

BC107B Documents

ST Microelectronics
9 Pages / 0.37 MByte
ST Microelectronics
3 Pages / 0.15 MByte

BC107 Documents

Multicomp
MULTICOMP BC107 Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 150MHz, 600mW, 100mA, 110 hFE
ST Microelectronics
Trans GP BJT NPN 45V 0.1A 3Pin TO-18 Bag
Central Semiconductor
BC Series 45V 100mA NPN Through Hole Silicon Transistor - TO-18
Micro Electronics
NPN SILICON PLANAR EPITAXIAL TRANSISTORo
New Jersey Semiconductor
Trans GP BJT NPN 45V 0.1A 3Pin TO-18 Box
SEME-LAB
GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR
ETC
Low Level and General Purpose Amplifiers
Multicomp
MULTICOMP BC107B Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 150MHz, 600mW, 100mA, 200 hFE
ST Microelectronics
Trans GP BJT NPN 45V 0.1A 3Pin TO-18 Bag
Phoenix
Enclosure: for DIN rail mounting; Y:89.7mm; X:107.6mm; Z:62.2mm
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