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Part Datasheet Search > BJTs > ON Semiconductor > BC848CWT1 Datasheet PDF
BC848CWT1
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BC848CWT1 Datasheet PDF (13 Pages)
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BC848CWT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
30.0 V
Current Rating
100 mA
Case/Package
SC-70-3
Polarity
NPN
Power Dissipation
150 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.1A
hFE Min
270
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

BC848CWT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape
Size-Length
2.1 mm
Size-Width
1.24 mm
Size-Height
0.85 mm

BC848CWT1 Documents

ON Semiconductor
13 Pages / 0.1 MByte
ON Semiconductor
13 Pages / 0.12 MByte

BC848 Documents

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30V, 100mA NPN general-purpose transistors
UTC
Small Signal Bipolar Transistor, 0.1A I(C), NPN
Continental Device
0.25W(1/4W) General Purpose NPN SMD Transistor. 30V Vceo, 0.1A Ic, 110 - 800 hFE. Complementary BC858
Infineon
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Fairchild
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KEC(Korea Electronics)
General Purpose Transistor
Motorola
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Toshiba
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal
Yageo
Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
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