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BC850BLT1G
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BC850BLT1G Datasheet PDF (13 Pages)
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BC850BLT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
45.0 V
Current Rating
100 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
225 mW
Gain Bandwidth Product
100 MHz
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
200 @2mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
225 mW

BC850BLT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.11 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC850BLT1G Documents

ON Semiconductor
13 Pages / 0.1 MByte
ON Semiconductor
14 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
6 Pages / 0.17 MByte

BC850BLT1 Documents

ON Semiconductor
SOT-23 NPN 45V 0.1A
ON Semiconductor
SOT-23 NPN 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor,
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