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Part Datasheet Search > BJTs > Infineon > BC857CE6327HTSA1 Datasheet PDF
BC857CE6327HTSA1
$ 0.127
BC857CE6327HTSA1 Datasheet PDF (11 Pages)
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BC857CE6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
250 MHz
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
330 mW
Gain Bandwidth Product
250 MHz
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
420
hFE Max
800
Input Power (Max)
330 mW
DC Current Gain (hFE)
420
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
330 mW

BC857CE6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1 mm
Operating Temperature
150℃ (TJ)

BC857CE6327HTSA1 Documents

Infineon
11 Pages / 0.84 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
34 Pages / 0.66 MByte
Infineon
1 Pages / 0.14 MByte

BC857CE6327 Documents

Infineon
SOT-23 PNP 45V 0.1A
Infineon
Trans GP BJT PNP 45V 0.1A Automotive 3Pin SOT-23 T/R
Infineon
PNP TRANSISTOR 45V 0,1A SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,
Infineon
SOT-23 PNP 45V 0.1A
Infineon
SOT-23 PNP 45V 0.1A
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