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Part Datasheet Search > BJTs > ON Semiconductor > BC857CLT3G Datasheet PDF
BC857CLT3G
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BC857CLT3G Datasheet PDF (7 Pages)
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BC857CLT3G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Case/Package
SOT-23-3
Polarity
PNP
Power Dissipation
0.3 W
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
420 @2mA, 5V
hFE Max
420 @2mA, 5V
Input Power (Max)
300 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BC857CLT3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC857CLT3G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
6 Pages / 0.17 MByte

BC857CLT3 Documents

Motorola
100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
ON Semiconductor
PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
ON Semiconductor
SOT-23 PNP 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
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