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Part Datasheet Search > BJTs > ON Semiconductor > BD13616S Datasheet PDF
BD13616S
$ 0.241
BD13616S Datasheet PDF (5 Pages)
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BD13616S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-126-3
Power Dissipation
1.25 W
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
100 @150mA, 2V
Input Power (Max)
1.25 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1250 mW

BD13616S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bag
Material
Silicon
Operating Temperature
150℃ (TJ)

BD13616S Documents

ON Semiconductor
5 Pages / 0.16 MByte
ON Semiconductor
7 Pages / 0.26 MByte

BD13616 Documents

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1.5A, 45V, PNP, Si, POWER TRANSISTOR, TO-126, PLASTIC, TO-126, 3 PIN
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Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
Samsung
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
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