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Part Datasheet Search > BJTs > ON Semiconductor > BD675A Datasheet PDF
BD675A
$ 0.105
BD675A Datasheet PDF (4 Pages)
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BD675A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
45.0 V
Current Rating
4.00 A
Case/Package
TO-126-3
Polarity
NPN
Power Dissipation
40000 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
4A
hFE Min
750 @2A, 3V
Input Power (Max)
40 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
40000 mW

BD675A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Height
11.04 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
500

BD675A Documents

ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
220 Pages / 1.94 MByte
ON Semiconductor
2 Pages / 0.1 MByte
ON Semiconductor
13 Pages / 0.34 MByte

BD675 Documents

ON Semiconductor
TO-225-3 NPN 45V 4A
Motorola
Plastic Medium-Power Silicon NPN Darlingtons
Samsung
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Central Semiconductor
Leaded Power Transistor Darlington
Continental Device
40W Darlington NPN Plastic Leaded Transistor. 45V Vceo, 4A Ic, 750 hFE. Complementary BD676
Fairchild
NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK
ST Microelectronics
4A, 45V, NPN, Si, POWER TRANSISTOR, TO-126
National Semiconductor
TRANSISTOR,BJT,DARLINGTON,NPN,45V V(BR)CEO,4A I(C),TO-126
Infineon
Transistor
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