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Part Datasheet Search > BJTs > ON Semiconductor > BD676G Datasheet PDF
BD676G
$ 0.05

BD676G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-126-3
Description:
TO-225 PNP 45V 4A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
BD676G Datasheet (4 Pages)
Package Outline Dimension on4 Page
Part Numbering System on1 Page3 Page4 Page
BD676G Application Note (4 Pages)
BD676G Datasheet PDF (4 Pages)
View Datasheet
Click page to view the detail

BD676G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-4.00 A
Case/Package
TO-126-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
40 W
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
4A
hFE Min
750 @1.5A, 3V
Input Power (Max)
40 W
DC Current Gain (hFE)
750
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
40000 mW
View Datasheet >

BD676G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
7.74 mm
Size-Width
2.66 mm
Size-Height
11.04 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

BD676G Documents

BD676G Datasheet
ON Semiconductor
4 Pages / 0.05 MByte
BD676G Other Datasheet PDF
ON Semiconductor
8 Pages / 0.23 MByte
BD676G Drawing Diagrams
ON Semiconductor
2 Pages / 0.03 MByte
BD676G Application Note
ON Semiconductor
4 Pages / 0.07 MByte

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Samsung
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Motorola
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ST Microelectronics
4A, 45V, PNP, Si, POWER TRANSISTOR, TO-126
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National Semiconductor
TRANSISTOR,BJT,DARLINGTON,PNP,45V V(BR)CEO,4A I(C),TO-126
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TI
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BD676 Datasheet PDF
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