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Part Datasheet Search > BJTs > Fairchild > BD682S Datasheet PDF
BD682S
$ 0.221
BD682S Datasheet PDF (4 Pages)
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BD682S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-4.00 A
Case/Package
TO-126-3
Polarity
PNP
Power Dissipation
14 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
4A
hFE Min
750 @1.5A, 3V
Input Power (Max)
14 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
14000 mW

BD682S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11.2 mm
Operating Temperature
150℃ (TJ)

BD682S Documents

Fairchild
4 Pages / 0.04 MByte
Fairchild
6 Pages / 0.13 MByte
Fairchild
4 Pages / 0.07 MByte

BD682 Documents

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40W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 4A Ic, 750 hFE. Complementary BD681>
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Samsung
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
National Semiconductor
TRANSISTOR,BJT,DARLINGTON,PNP,100V V(BR)CEO,4A I(C),TO-126
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