BF998WR,115 Datasheet PDF - NXP

●NXP Semiconductors offers the perfect solution for amplifying and switching electronic signals in a radio frequency environment with this BF998WR,115 RF amplifier. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in depletion mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C.