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Part Datasheet Search > MOSFETs > ON Semiconductor > BFL4001-1E Datasheet PDF
BFL4001-1E
$ 2.348
BFL4001-1E Datasheet PDF (8 Pages)
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BFL4001-1E Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
2.7 Ω
Power Dissipation
2 W
Drain to Source Voltage (Vds)
900 V
Breakdown Voltage (Drain to Source)
900 V
Rise Time
49 ns
Input Capacitance (Ciss)
850pF @30V(Vds)
Fall Time
52 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Ta), 37W (Tc)

BFL4001-1E Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

BFL4001-1E Documents

ON Semiconductor
8 Pages / 0.24 MByte
ON Semiconductor
7 Pages / 0.24 MByte

BFL40011 Documents

ON Semiconductor
Trans MOSFET N-CH Si 900V 6.5A 3Pin(3+Tab) TO-220FI Tube
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