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Part Datasheet Search > BJTs > Infineon > BFP193E6327HTSA1 Datasheet PDF
BFP193E6327HTSA1
$ 0.178
BFP193E6327HTSA1 Datasheet PDF (6 Pages)
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BFP193E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
12.0 V
Current Rating
80.0 mA
Case/Package
SOT-143-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
580 mW
Input Capacitance
2.25 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
12dB ~ 18dB
hFE Min
70 @30mA, 8V
Input Power (Max)
580 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
580 mW

BFP193E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

BFP193E6327HTSA1 Documents

Infineon
6 Pages / 0.53 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
5 Pages / 0.03 MByte
Infineon
1 Pages / 0.13 MByte

BFP193E6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 20V; 80mA; 580mW; SOT143
Infineon
Trans GP BJT NPN 12V 0.08A 4Pin(3+Tab) SOT-143 T/R
Siemens Semiconductor
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Infineon
Trans RF BJT NPN 12V 0.08A Automotive 4Pin(3+Tab) SOT-143 T/R
Infineon
Trans GP BJT NPN 12V 0.08A Automotive 4Pin(3+Tab) SOT-143 T/R
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