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Part Datasheet Search > BJTs > Infineon > BFP540FESDE6327 Datasheet PDF
BFP540FESDE6327
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BFP540FESDE6327 Datasheet PDF (6 Pages)
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BFP540FESDE6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SMD-4
Breakdown Voltage (Collector to Emitter)
5 V
Gain
20 dB
hFE Min
50 @20mA, 3.5V
Input Power (Max)
250 mW

BFP540FESDE6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)
Operating Temperature
150℃ (TJ)

BFP540FESDE6327 Documents

Infineon
6 Pages / 0.52 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
1 Pages / 0.02 MByte

BFP540 Documents

Infineon
Trans RF BJT NPN 4.5V 0.08A Automotive 4Pin(3+Tab) SOT-343 T/R
NXP
TRANSISTOR S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
Philips
Transistor
Sanyo Semiconductor
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, ECSP1008-4, 4 PIN
Infineon
Trans RF BJT NPN 4.5V 0.08A 0.25W(1/4W) Automotive 4Pin TSFP T/R
Infineon
Trans RF BJT NPN 4.5V 0.08A 0.25W(1/4W) Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.5V 0.08A 0.25W(1/4W) Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.5V 0.08A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Transistor: NPN; bipolar; RF; 4.5V; 80mA; 0.25W(1/4W); SOT343
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