BLF647P Datasheet PDF - NXP

●General description

●A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

● Features and benefits

● Integrated ESD protection

● Excellent ruggedness

● High power gain

● High efficiency

● Excellent reliability

● Easy power control

● Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

●Applications

● Communication transmitter applications inthe HF to 1500 MHz frequency range

● Industrial applications in the HF to 1500 MHz frequency range