BLF6G10LS-160RN Datasheet PDF - NXP

●General description

●160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

●Features

●Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA:

●  Average output power = 32 W

●  Power gain = 22.5 dB

●  Efficiency = 27 %

●  ACPR = −41 dBc

●Easy power control

●Integrated ESD protection

●Excellent ruggedness

●High efficiency

●Excellent thermal stability

●Designed for broadband operation (700 MHz to 1000 MHz)

●Internally matched for ease of use

●Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)