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Part Datasheet Search > Phototransistor > VISHAY > BPW96B Datasheet PDF
BPW96B
Part 3D Model
$ 0.286
BPW96B Datasheet PDF (5 Pages)
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BPW96B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Case/Package
T-1
Number of Positions
2 Position
Wavelength
850 nm
Viewing Angle
20°
Peak Wavelength
850 nm
Power Dissipation
0.15 W
Power Consumption
150 mW
Rise Time
2 µs
Fall Time
2.3 µs
Operating Temperature (Max)
100 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
150 mW

BPW96B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Height
8.6 mm
Operating Temperature
-40℃ ~ 100℃

BPW96B Documents

VISHAY
5 Pages / 0.1 MByte
VISHAY
6 Pages / 0.1 MByte

BPW96 Documents

Vishay Semiconductor
PHOTOTRANSISTOR NPN 5MM CLEAR
VISHAY
Phototransistor; λp max:850nm; 70V; 20°; Lens: transparent; Ø:5mm
VISHAY
Phototransistor; λp max:830nm; 70V; 20°; Lens: transparent; Ø:5mm
Vishay Semiconductor
BPW96 Series 850nm ± 20° Through Hole Silicon NPN Phototransistor - T-1 3/4
Vishay Semiconductor
VISHAY BPW96C Phototransistor, 850nm, 20°, 150mW, 2Pins, T-1 3/4 (5mm)
Vishay Semiconductor
Phototransistors NPN Phototransistor 70V 150mW 850nm
VISHAY
Phototransistor IR Chip Silicon 850nm 2Pin T-1 3/4
ATMEL
Photo Transistor, 850nm
ATMEL
Photo Transistor, 850nm
ATMEL
Photo Transistor, 850nm
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