BSB028N06NN3GXUMA1 Datasheet PDF - Infineon

●The BSB028N06NN3 G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). It can be used for a broad range of industrial applications including solar micro inverter and fast switching DC-to-DC converter.

● Excellent gate charge x RDS (ON) product (FOM)

● Very low ON-resistance RDS (ON)

● Ideal for fast switching applications

● Halogen-free, Green device

● Highest system efficiency

● Less paralleling required

● Increased power density

● Very low voltage overshoot

● Superior thermal resistance

● Dual sided cooling

● Low parasitic inductance

● Normal level

● 100% Avalanche tested

● Qualified according to JEDEC for target applications

● Compatible with DirectFET® package MN foot-print and outline

● MSL1 rated