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Part Datasheet Search > MOSFETs > Infineon > BSC060P03NS3EGATMA1 Datasheet PDF
BSC060P03NS3EGATMA1
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BSC060P03NS3EGATMA1 Datasheet PDF (9 Pages)
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BSC060P03NS3EGATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0041 Ω
Polarity
P-Channel
Power Dissipation
83 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
17.7A
Rise Time
139 ns
Input Capacitance (Ciss)
4530pF @15V(Vds)
Fall Time
34 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

BSC060P03NS3EGATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.35 mm
Size-Width
5.35 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃

BSC060P03NS3EGATMA1 Documents

Infineon
9 Pages / 0.52 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

BSC060P03NS3 Documents

Infineon
TDSON P-CH 30V 17.7A
Infineon
Trans MOSFET P-CH 30V 17.7A 8Pin TDSON EP
Infineon
Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Infineon
MOSFET P-Ch 17.7A 30V OptiMOS P3 TDSON8
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