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Part Datasheet Search > MOSFETs > Infineon > BSC080N03LSGATMA1 Datasheet PDF
BSC080N03LSGATMA1
$ 0.623
BSC080N03LSGATMA1 Datasheet PDF (10 Pages)
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BSC080N03LSGATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8
Power Rating
35 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0067 Ω
Polarity
N-Channel
Power Dissipation
35 W
Threshold Voltage
2.2 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
14A
Rise Time
2.8 ns
Input Capacitance (Ciss)
1300pF @15V(Vds)
Fall Time
2.6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 35W (Tc)

BSC080N03LSGATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.9 mm
Size-Width
5.15 mm
Size-Height
1.27 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSC080N03LSGATMA1 Documents

Infineon
10 Pages / 0.5 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
58 Pages / 1.14 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte

BSC080N03 Documents

Infineon
TDSON N-CH 30V 13A
Infineon
TDSON N-CH 30V 14A
Infineon
Trans MOSFET N-CH 30V 14A 8Pin TDSON EP
Infineon
MOSFET N-CH 30V 53A TDSON-8
Infineon
Trans MOSFET N-CH 30V 13A 8Pin TDSON EP
Infineon
Trans MOSFET N-CH 30V 14A 8Pin TDSON EP T/R
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