$ 5.924

BSL211SPL6327HTSA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TSOT-23-6

Description:

TSOP P-CH 20V 4.7A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BSL211SPL6327HTSA1 Datasheet (8 Pages)

BSL211SPL6327HTSA1 Datasheet PDF (8 Pages)

View Datasheet

Click page to view the detail

BSL211SPL6327HTSA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOT-23-6

Polarity

P-CH

Power Dissipation

2W (Ta)

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

4.7A

Rise Time

13.9 ns

Input Capacitance (Ciss)

654pF @15V(Vds)

Input Power (Max)

2 W

Fall Time

23.3 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2W (Ta)

View Datasheet >

BSL211SPL6327HTSA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

BSL211SPL6327HTSA1 Environmental

BSL211SPL6327HTSA1 Function Overview

BSL211SPL6327HTSA1 Documents

BSL211SPL6327HTSA1 Datasheet

Infineon

8 Pages / 0.34 MByte

BSL211SPL6327HTSA1 Other Datasheet PDF

Infineon

8 Pages / 0.26 MByte

BSL211SPL6327HTSA1 Other References

Infineon

1 Pages / 0.12 MByte

BSL211SPL6327 Documents

BSL211SP L6327 Datasheet PDF

Infineon

Trans MOSFET P-CH 20V 4.7A 6Pin TSOP T/R

BSL211SPL6327 Datasheet PDF

Infineon

Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSOP-6

BSL211SPL6327HTSA1 Datasheet PDF

Infineon

TSOP P-CH 20V 4.7A

BSL211SPL6327XT Datasheet PDF

Infineon

Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSOP-6