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BSM50GB60DLCHOSA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Description:

Trans IGBT Module N-CH 600V 75A 280000mW Tray

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Documentation:

BSM50GB60DLCHOSA1 Datasheet (1 Pages)

BSM50GB60DLCHOSA1 Datasheet PDF (1 Pages)

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BSM50GB60DLCHOSA1 Specifications

TYPE

DESCRIPTION

Power Dissipation

280000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Input Capacitance (Cies)

2.2nF @25V

Input Power (Max)

280 W

Operating Temperature (Max)

125 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

280000 mW

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