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Part Datasheet Search > MOSFETs > Infineon > BSP300H6327XUSA1 Datasheet PDF
BSP300H6327XUSA1
$ 1.426
BSP300H6327XUSA1 Datasheet PDF (9 Pages)
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BSP300H6327XUSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-223-4
Power Rating
1.8 W
Number of Channels
1 Channel
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
15 Ω
Polarity
N-CH
Power Dissipation
1.8 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
0.19A
Rise Time
16 ns
Input Capacitance (Ciss)
170pF @25V(Vds)
Fall Time
21 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.8W (Ta)

BSP300H6327XUSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSP300H6327XUSA1 Documents

Infineon
9 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
19 Pages / 0.88 MByte

BSP300H6327 Documents

Infineon
Trans MOSFET N-CH 800V 0.19A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
SOT-223 N-CH 800V 0.19A
IFC
N-Channel 800V 20Ω SIPMOS® Small-Signal-Transistor - PG-SOT-223
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