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Part Datasheet Search > MOSFETs > Infineon > BSS816NW L6327 Datasheet PDF
BSS816NW L6327
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BSS816NW L6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-323-3
Number of Channels
1 Channel
Power Dissipation
500mW (Ta)
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Input Capacitance (Ciss)
180pF @10V(Vds)
Power Dissipation (Max)
500mW (Ta)

BSS816NW L6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSS816NW L6327 Documents

Infineon
9 Pages / 0.45 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.44 MByte

BSS816 Documents

Infineon
SOT-323 N-CH 20V 1.4A
Infineon
Trans MOSFET N-CH 20V 1.4A 3Pin SOT-323 T/R
Infineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002).
Infineon
MOSFET N-CH 20V 1.4A SOT323
Infineon
N-CH 20V 1.4A
Infineon
BSS816NWH6327
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