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Part Datasheet Search > MOSFETs > Infineon > BSZ0909NSATMA1 Datasheet PDF
BSZ0909NSATMA1
$ 0.753
BSZ0909NSATMA1 Datasheet PDF (9 Pages)
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BSZ0909NSATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TSDSON-8
Power Rating
25 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.01 Ω
Polarity
N-CH
Power Dissipation
2.1 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
34 V
Continuous Drain Current (Ids)
9A
Rise Time
2.2 ns
Input Capacitance (Ciss)
1310pF @15V(Vds)
Input Power (Max)
2.1 W
Fall Time
2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.1W (Ta), 25W (Tc)

BSZ0909NSATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSZ0909NSATMA1 Documents

Infineon
9 Pages / 0.65 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte

BSZ0909 Documents

Infineon
TSDSON N-CH 34V 9A
Infineon
TSDSON N-CH 34V 9A
Infineon
Trans MOSFET N-CH 30V 8.1A 8Pin WISON EP T/R
Infineon
The used OptiMOS™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.
Infineon
TSDSON N-CH 34V 9A
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