●The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel.
●The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
●The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
●All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
●The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.
● 10-Bit Resolution
● 8-Channel P-Gamma
● 1-Channel P-VCOM
● High Slew Rate VCOM: 45 V/µs
● 16x Rewritable Nonvolatile Memory
● Two Independent Pin-Selectable Memory Banks
● Rail-to-Rail Output:
● 300 mV Min Swing-to-Rail (10 mA)
● > 300 mA Max IOUT
● Low Supply Current
● Supply Voltage: 9 V to 20 V
● Digital Supply: 2 V to 5.5 V
● Two-Wire Interface:
● Supports 400 kHz and 3.4 MHz
● 1/2 AVDD Capability
● APPLICATIONS
● TFT-LCD Reference Drivers
●All other trademarks are the property of their respective owners
Part 3D Model
