BUK107-50DL Datasheet PDF - NXP

●N-channel enhancement mode vertical D-MOS transistor Vertical power DMOS output stage Overload protected up to 85˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads