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Part Datasheet Search > BJTs > ON Semiconductor > BUV22G Datasheet PDF
BUV22G
$ 0.465
BUV22G Datasheet PDF (4 Pages)
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BUV22G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
8 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
250 V
Current Rating
40.0 A
Case/Package
TO-204-2
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
250 W
Breakdown Voltage (Collector to Emitter)
250 V
Continuous Collector Current
40A
hFE Min
20 @10A, 4V
Input Power (Max)
250 W
DC Current Gain (hFE)
8
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
250000 mW

BUV22G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

BUV22G Documents

ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
1 Pages / 0.36 MByte

BUV22 Documents

ON Semiconductor
Bipolar Transistors - BJT 40A 250V 250W NPN
Motorola
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250W
ST Microelectronics
40A, 250V, NPN, Si, POWER TRANSISTOR, TO-3
Semelab
40A, 250V, NPN, Si, POWER TRANSISTOR, TO-204AE, HERMETIC SEALED, METAL, TO-3, 2 PIN
TT Electronics Resistors
Power Bipolar Transistor, 40A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Inchange Semiconductor
Transistor
Iskra
Transistor
Usha
Transistor
ON Semiconductor
TO-204 NPN 250V 40A
ON Semiconductor
Switchmode Series NPN Silicon Power Transistor
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