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BUX10 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-3

Description:

Trans GP BJT NPN 125V 25A 150000mW 3Pin(2+Tab) TO-3 Bag

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

BUX10 Datasheet (4 Pages)

BUX10 Datasheet PDF (4 Pages)

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BUX10 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

8 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

125 V

Current Rating

25.0 A

Case/Package

TO-3

Power Rating

150 W

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

150 W

Breakdown Voltage (Collector to Emitter)

125 V

hFE Min

20 @10A, 2V

hFE Max

Input Power (Max)

150 W

DC Current Gain (hFE)

Operating Temperature (Max)

200 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

150000 mW

View Datasheet >

BUX10 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Bag

Material

Silicon

Size-Length

39.5 mm

Size-Width

26.2 mm

Size-Height

8.7 mm

Operating Temperature

200℃ (TJ)

View Datasheet >

BUX10 Environmental

BUX10 Function Overview

BUX10 Documents

BUX10 Datasheet

ST Microelectronics

4 Pages / 0.04 MByte

BUX10 Notice File

ST Microelectronics

5 Pages / 0.03 MByte

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