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Part Datasheet Search > MOSFETs > Infineon > BUZ31L Datasheet PDF
BUZ31L
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BUZ31L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
13.5 A
Case/Package
TO-220-3
Power Dissipation
95W (Tc)
Input Capacitance
1.12 nF
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
14.5 A
Input Capacitance (Ciss)
1600pF @25V(Vds)
Power Dissipation (Max)
95W (Tc)

BUZ31L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

BUZ31L Documents

Infineon
9 Pages / 0.19 MByte
Infineon
10 Pages / 0.57 MByte
Infineon
1 Pages / 0.12 MByte

BUZ31 Documents

Infineon
MOSFET N-CH 200V 14.5A TO220AB
Siemens Semiconductor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Infineon
TO-262 N-CH 200V 14.5A
Infineon
Trans MOSFET N-CH 200V 14.5A 3Pin(2+Tab) TO-263
Infineon
Trans MOSFET N-CH 200V 13.5A 3Pin(3+Tab) TO-220AB
Infineon
MOSFET N-CH 200V 13.5A TO220-3
Infineon
MOSFET N-CH 200V 14.5A TO263
Infineon
MOSFET N-CH 200V 13.5A TO-220
Infineon
N-CH 200V 14, 5A 200mOhm TO262-3
Siemens Semiconductor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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