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CPV363M4KPBF
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CPV363M4KPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
13 Pin
Case/Package
IMS-2-13
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
0.74nF @30V
Input Power (Max)
36 W

CPV363M4KPBF Documents

VISHAY
10 Pages / 0.27 MByte
VISHAY
11 Pages / 0.25 MByte

CPV363M4 Documents

Vishay Semiconductor
VISHAY CPV363M4K IGBT Array & Module Transistor, N Channel, 11A, 600V, 36W, 600V, Module
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VISHAY CPV363M4F IGBT Array & Module Transistor, N Channel, 16A, 600V, 36W, 600V, SIP
Vishay Semiconductor
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Trans IGBT Module N-CH 600V 13A 36000mW 13Pin IMS-2
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VISHAY
Trans IGBT Module N-CH 600V 11A 36000mW 13Pin IMS-2
VISHAY
Trans IGBT Module N-CH 600V 11A 36000mW 13Pin IMS-2
International Rectifier
MOD IGBT 3PHASE INV 600V SIP
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600V Fast 1-8kHz 3-Phase Bridge IGBT in a IMS-2 package
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