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CSD18511Q5AT
$ 1.251
CSD18511Q5AT Datasheet PDF (13 Pages)
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CSD18511Q5AT Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
VSONP-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0019 Ω
Polarity
N-Channel
Power Dissipation
104 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
40 V
Rise Time
15 ns
Input Capacitance (Ciss)
5850pF @10V(Vds)
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1W (Ta)

CSD18511Q5AT Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

CSD18511Q5AT Documents

TI
13 Pages / 0.58 MByte
TI
12 Pages / 0.41 MByte

CSD18511Q5 Documents

TI
TEXAS INSTRUMENTS CSD18511Q5AT MOSFET Transistor, N Channel, 27A, 40V, 0.0019Ω, 10V, 1.8V New
TI
Trans MOSFET N-CH Si 40V 100A 8Pin VSONP EP T/R
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