DMMT5551S-7-F Datasheet PDF - Diodes

●Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN DMMT5551S-7-F GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.