DN3545N3-G Datasheet PDF - Supertex

●General Description

●These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

●Features

●►High input impedance

●►Low input capacitance

●►Fast switching speeds

●►Low on resistance

●►Free from secondary breakdown

●►Low input and output leakage

●Applications

●►Normally-on switches

●►Solid state relays

●►Converters

●►Linear amplifiers

●►Constant current sources

●►Power supply circuits

●►Telecom